Semiconductor power module
US4710795A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Feb 25, 1985 |
| Grant date | Dec 1, 1987 |
| Priority date | — |
| Expiry date | Feb 25, 2005 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/15787
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor power module includes at least two mutually parallel ceramic substrates each having two sides, metallizations disposed on at least one side of each of the substrates, at least one controlled semiconductor power component disposed between each two respective substrates and contacted by the metallizations above and below the component, the substrate above the component having at least one hole formed therein above the component for accommodting control connections to the component.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.