Electronic device manufacturing methods
US4713518A · kind A · utility
62Cited by
4References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 3, 1985 |
| Grant date | Dec 15, 1987 |
| Priority date | — |
| Expiry date | Jun 3, 2005 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/94
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
In a method of making an electronic device having at least a transparent conductive layer, which includes at least a step of forming a transparent conductive layer member and a step of forming a transparent conductive layer by patterning the transparent conductive layer member using a spot-shaped or linear laser beam or beams, each of which has a short wavelength of 400 nm or less and optical energy greater than the optical energy band gap of the transparent conductive layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.