Reactor for vapor phase epitaxy
US4714594A · kind A · utility
21Cited by
10References
5Claims
0Family size
Inventor
Key dates
| Filing date | Jun 25, 1985 |
| Grant date | Dec 22, 1987 |
| Priority date | — |
| Expiry date | Jun 25, 2005 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B25/12
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A reactor for vapor phase epitaxy, wherein to bring about a vapor phase epitaxial growth or epitaxy on one face of a substrate, the latter is heated and placed in an epitaxy gas stream flowing in a given direction and the face is kept parallel to the direction and in a position where the gases play upon the same and such performs rotary movement about an axis which is perpendicular to the face and to the direction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.