Method of producing semiconductor laser
US4716125A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Nov 26, 1986 |
| Grant date | Dec 29, 1987 |
| Priority date | — |
| Expiry date | Nov 26, 2006 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/0424
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A compound semiconductor laser comprises a semi-insulating substrate, a lower clad layer, an MQW active layer, an upper clad layer, and two electrodes on the top surface thereof. The upper clad layer is formed so as to have a property of reducing the diffusion coefficient of impurities, from the lower portion toward the upper portion thereof. Impurity atoms are thermally diffused into the lower clad layer from the top surface thereof to form an N-type region and a P-type region, respectively. The side diffusion fronts of the N- and P-type regions are nearly vertical, and thus a narrow MQW active region is defined by disordered portions of the MQW active layer in the N- and P-type regions. The light and carriers are effectively confined in the narrow active region by using the vertical and transverse double-heterostructures and refractive index differences.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.