Process for forming deposited film
US4717585A · kind A · utility
32Cited by
9References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 6, 1986 |
| Grant date | Jan 5, 1988 |
| Priority date | — |
| Expiry date | Feb 6, 2006 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0262
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process for forming a deposited film comprises introducing into a film forming space housing a substrate therein an active species (A) formed by decomposition of a compound containing carbon and a halogen and an active species (B) formed from a chemical substance for film formation which is reactive with said active species (A) separately from each other, and then allowing both the species to react with each other thereby to form a deposited film on the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.