Process for forming deposited film
US4717586A · kind A · utility
29Cited by
9References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 13, 1986 |
| Grant date | Jan 5, 1988 |
| Priority date | — |
| Expiry date | Feb 13, 2006 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process for forming a deposited film comprises introducing into a film forming space for forming a deposited film on a substrate an activated species (A) formed by decomposition of a compound containing silicon and a halogen and an activated species (B) formed from a germanium containing compound for film formation which is chemically mutually reactive with said activated species (A) separately from each other, and then permitting the both species to react chemically with each other thereby to form a deposited film on the above substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.