Charge storage structure for nonvolatile memories
US4717943A · kind A · utility
34Cited by
5References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 16, 1986 |
| Grant date | Jan 5, 1988 |
| Priority date | — |
| Expiry date | Jul 16, 2006 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/681
Abstract
A four layer charge storage structure comprising alternate layers of silicon-rich silicon dioxide and silicon dioxide with electrode layers on top and bottom. The upper and middle silicon-rich layers act as enhanced Fowler-Nordheim injectors and the middle silicon-rich layer also stores charges since the silicon particles act as deep traps. The charge storage structure is applicable to nonvolatile memories.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.