Detection of oxygen in thin films
US4719120A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 29, 1986 |
| Grant date | Jan 12, 1988 |
| Priority date | — |
| Expiry date | Sep 29, 2006 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N23/2202
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method for determining the presence, during deposition of a first thin m layer, of a substance which escapes when the layer is cooled and transferred from its deposition environment for analysis to determine the presence of the substance. The layer is first covered with a second layer of a material which captures the escaping substance. This second layer is then covered with a cap layer of a substance which seals the second layer against contamination, as from the atmosphere during transfer. The layered structure, with the escaped substance retained in the second layer, is then analyzed, as by sputter depth profiling and Auger electron spectroscopy, to determine the presence in the second layer of the escaped substance and thus determine the presence of this substance during deposition of the first layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.