Positive-working photoresist elements containing anti-reflective butadienyl dyes which are thermally stable at temperatures of at least 200.degree. C.
US4719166A · kind A · utility
21Cited by
6References
14Claims
0Family size
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Key dates
| Filing date | Jul 29, 1986 |
| Grant date | Jan 12, 1988 |
| Priority date | — |
| Expiry date | Jul 29, 2006 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0276
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Positive-working photoresist elements are protected against reflection of activating radiation from the substrate by incorporation of certain butadienyl dyes in a photoresist layer, an anti-reflective layer or a planarizing layer. These dyes have superior resistance to thermal degradation or volatilization at temperatures of as high as 200.degree. C. or more. The dyes also exhibit good solubility in solvents commonly employed in processing semiconductor devices, thus permitting the dyes to be incorporated in photoresist elements in an amount sufficient to prevent resist image distortion caused by backscattered or reflected light.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.