Process for the production of a monolithic integrated optical device incorporating a semiconductor laser and device obtained by this process
US4720468A · kind A · utility
Inventors
Key dates
| Filing date | Nov 13, 1985 |
| Grant date | Jan 19, 1988 |
| Priority date | — |
| Expiry date | Nov 13, 2005 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/095
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Process for the production of a monolithic integrated optical device incorporating a semiconductor laser and an optical waveguide, as well as to a device obtained by this process. The substrate is given a profile having at least one step. On said substrate is deposited by a single epitaxy operation performed in the vapour phase and in a successive manner a first confinement layer, a guidance layer made from a material transparent for the radiation emitted by the laser, a second confinement layer, an active layer, a third confinement layer and a contact layer. The transparent material has a refractive index higher than the indices of the confinement layers surrounding the same. Thickness values are given to the different layers such that the active layer of the lower stack faces the transparent layer of the upper stack. Application to optical telecommunications.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.