Method of manufacturing thin-film electroluminescent display panel
US4721631A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 9, 1987 |
| Grant date | Jan 26, 1988 |
| Priority date | — |
| Expiry date | Mar 9, 2007 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05B33/12
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
According to a method of this invention for manufacturing a thin-film electroluminescent display panel of the type having a pair of electrodes sandwiching a three-layer structure composed of a layer covered with dielectric layers on both sides, a silicon nitride or silicon oxynitride film is formed on a layer comprising ZnS by a plasma chemical vapor deposition method with a mixture of silicon and nitrogen gases or of silicon, nitrogen and N.sub.2 O gases. Alternatively, this film may be formed in a double-layer structure, the second layer being formed with a mixture of silicon and ammonia gases or of silicon, ammonia and N.sub.2 O gases. A dielectric layer thus formed by a method embodying this invention can satisfactorily cover the protrusions and impurities in the layer underneath and thin-film electroluminescent elements manufactured by this method have superior brightness characteristics.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.