Magnetoresistive random access cross-tie memory architecture and signal processing system
US4722073A · kind A · utility
12Cited by
4References
4Claims
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Key dates
| Filing date | Nov 5, 1985 |
| Grant date | Jan 26, 1988 |
| Priority date | — |
| Expiry date | Nov 5, 2005 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C19/0866
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A magnetoresistive random access memory array and signal processing system which provides an improved signal to noise ratio. The basic memory complex associated with the storage of a single binary digit is a quad of memory elements or cells which are addressed in complementary fashion. The enhanced read-out signal discrimination is had by utilizing a double-correlated double-sampling differential signal processing system in which complementary data is serially passed through the same path with repeated high-speed differencing which greatly reduces nonuniformity fixed patterns as well as correlated low frequency temporal noise.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.