Method of manufacturing a semiconductor device
US4722130A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Feb 17, 1987 |
| Grant date | Feb 2, 1988 |
| Priority date | — |
| Expiry date | Feb 17, 2007 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/4981
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disclosed is a method of manufacturing a semiconductor device which comprises the step of forming grooves in the form of a grid on the upper surface of a semiconductor wafer formed with elements, the step of grinding or polishing the underside of the semiconductor wafer to thereby reduce the thickness thereof, the step of applying a first single-sided, self-adhesive sheet onto the underside of the semiconductor wafer, and the step of stretching the second single-sided, self-adhesive sheet so as to space out each other a multiplicity of semiconductor chips divided along the gridlike grooves of the semiconductor wafer. Each semiconductor chip is picked up and mounted on a lead frame.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.