Radiation-sensitive resist composition with an admixture of cis-(1,3,5,7-tetrahydroxy)-1,3,5,7-tetraphenylcyclotetrasiloxane and a polysilsesquioxane
US4722881A · kind A · utility
32Cited by
12References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 16, 1985 |
| Grant date | Feb 2, 1988 |
| Priority date | — |
| Expiry date | Dec 16, 2005 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S430/168
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
This invention relates to a radiation-sensitive composition having resistance to oxygen reactive-ion etching and a process for forming a pattern by using the same. The radiation-sensitive composition of this invention comprises a mixture of cis-(1,3,5,7-tetrahydroxy)-1,3,5,7-tetraphenylcyclotetrasiloxane and a polysilsesquioxane, said mixture containing 5 to 100 wt. % of cis-(1,3,5,7-tetrahydroxy)-1,3,5,7-tetraphenylcyclotetrasiloxane, and a resist containing a phenolic resin soluble in an aqueous alkali solution.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.