Doped semiconductor vias to contacts
US4722913A · kind A · utility
22Cited by
3References
2Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Oct 17, 1986 |
| Grant date | Feb 2, 1988 |
| Priority date | — |
| Expiry date | Oct 17, 2006 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/934
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In the manufacture of integrated circuits, an undoped wide band-gap semiconductor is used for the insulating layer to isolate the silicon substrate from the metal interconnection pattern. To provide conductive vias through the insulating layer for connection to the source and drain of the transistors of the circuit, the wide band-gap semiconductor is implanted with a dopant selectively in the portion overlying the source and drain for making the implanted portion of low resistivity and of the conductivity type of the source and drain. Preferably, carbon is the wide band-gap semiconductor and nitrogen is the dopant implanted.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.