Semiconductor device having a programmable fuse element
US4723155A · kind A · utility
19Cited by
10References
9Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Sep 24, 1986 |
| Grant date | Feb 2, 1988 |
| Priority date | — |
| Expiry date | Sep 24, 2006 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S257/926
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A fuse element is formed on a field insulation film on a semiconductor substrate of n conductivity type in which MOS transistors are formed. A first guard ring region of second conductivity type is provided in the substrate, surrounding the semiconductor substrate region under the fuse element. A second guard ring region of first conductivity type is formed in the substrate, surrounding the first guard ring region. Proper potentials are applied to the first and second guard ring regions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.