Photoconductive membrane for exhibiting photoconductivity upon illumination by electromagnetic light in the visible to ultraviolet range
US4724193A · kind A · utility
Inventor
Key dates
| Filing date | Sep 30, 1986 |
| Grant date | Feb 9, 1988 |
| Priority date | — |
| Expiry date | Sep 30, 2006 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03G5/08235
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A first blocking layer is formed of amorphous silicon carbide (a-Si:C) or amorphous silicon nitride (a-Si:N) on a conductive substrate. The first blocking layer contains 1.times.10.sup.-4 to 1.0 atomic % of a Group III or V element in the Periodic Table. A second blocking layer formed of a-Si:C or a-Si:N on the first blocking layer contains 1.times.10.sup.-8 to 1.times.10.sup.-4 atomic %. The second blocking layer has a thickness of 5 to 40 .mu.m, and a photoconductive layer formed of a-Si is stacked on the second blocking layer to a thickness of 0.5 to 5 .mu.m. With this multilayer structure, a photosensitive member having high charging and potential holding properties can be obtained.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.