Method of making electrical contacts
US4724223A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Dec 11, 1986 |
| Grant date | Feb 9, 1988 |
| Priority date | — |
| Expiry date | Dec 11, 2006 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/929
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Electrical contacts are made to conductive elements of an array which are embedded in a matrix of silicon with the conductive elements exposed at a surface. The surface is covered with silicon oxide, and an opening is made in the silicon oxide to expose a portion of the matrix and a portion of each of several conductive elements. A silicide-forming metal, for example cobalt, is deposited, the assemblage is heated to cause the cobalt to react with the exposed silicon to form conductive cobalt disilicide. The cobalt disilicide is in ohmic contact with each of the conductive elements at the interfaces therewith and is in rectifying contact with the silicon of the matrix at the interface therewith. Unreacted cobalt overlying the silicon oxide is removed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.