Semiconductor defects curing method and apparatus
US4725558A · kind A · utility
30Cited by
9References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 6, 1986 |
| Grant date | Feb 16, 1988 |
| Priority date | — |
| Expiry date | Nov 6, 2006 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S136/29
Abstract
An improved semiconductor defects curing method and apparatus are disclosed which is free from current leakage due to pin-holes or other defects. Also an improved method for processing a semiconductor device is shown. According to the invention, the gaps or holes in the semiconductor layer produced in the fabrication process are filled with insulator in advance of deposition of electrodes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.