Method of diffusing conductivity type imparting material into III-V compound semiconductor material
US4725565A · kind A · utility
2Cited by
6References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 26, 1986 |
| Grant date | Feb 16, 1988 |
| Priority date | — |
| Expiry date | Jun 26, 2006 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/2233
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Method of diffusing sulfur into gallium arsenide without degrading the surface of the gallium arsenide. A gallium arsenide wafer is placed in close proximity to a quantity of powdered gallium sulfide intermixed with powdered gallium arsenide. The assemblage is heated in an open-tube furnace in the presence of flowing nitrogen to vaporize sulfur while the gallium arsenide and gallium sulfide are in thermodynamic equilibrium whereby sulfur diffuses into the gallium arsenide wafer without eroding the surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.