Memory cell with diodes providing radiation hardness
US4725875A · kind A · utility
10Cited by
5References
11Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Oct 1, 1985 |
| Grant date | Feb 16, 1988 |
| Priority date | — |
| Expiry date | Oct 1, 2005 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S257/903
Abstract
A memory cell has a pair of cross-coupled inverters, such as a CMOS pair. Diodes are coupled in series with the transistors to reduce the possibility of radiation-induced currents in the transistors causing a change in state of the cell by providing resistance that increases the cell time constant. The transistors and the diodes are formed in the body of a semiconducting material. The diodes require at most only a small additional cell area as compared with a cell that does not have the diodes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.