Process for forming deposited film
US4726963A · kind A · utility
63Cited by
42References
23Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 9, 1987 |
| Grant date | Feb 23, 1988 |
| Priority date | — |
| Expiry date | Jun 9, 2007 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0262
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process for forming a deposited film comprises introducing into a film forming space housing a substrate therein an active species (A) formed by decomposition of a compound containing germanium and a halogen and an active species (B) formed from a chemical substance for film formation which is reactive with said active species (A) separately from each other, then irradiating them with light energy and thereby allowing both the species to react with each other thereby to form a deposited film on the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.