Programmable read-only memory formed with opposing PN diodes
US4727409A · kind A · utility
27Cited by
8References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 5, 1985 |
| Grant date | Feb 23, 1988 |
| Priority date | — |
| Expiry date | Aug 5, 2005 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S257/926
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor PROM contains a group of PROM cells (12) each consisting of a pair of opposing diodes oriented vertically with their common intermediate region (22 and 24) fully adjoining a recessed oxide insulating region (16). The PN junction (30) of the upper diode of each pair lies in non-monocrystalline semiconductor material. A composite buried layer consisting of buried regions (32) which adjoin the insulating region below the lower cell regions (20) and a buried web (44) which laterally surrounds each buried region is employed to improve programming efficiency as well as provide intermediate electrical connections.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.