Thick film conductor structure
US4728534A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 4, 1986 |
| Grant date | Mar 1, 1988 |
| Priority date | — |
| Expiry date | Aug 4, 2006 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05K2203/1453
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
In one embodiment of the present invention a thick film resistor structure comprising common materials is disclosed. The structure includes a supporting carrier as a base for the thick film resistor arrangement, which comprises a resistive material printed on the carrier, first and second noble metal terminating layers connected to either side of the resistive material, first and second barrier layers respectively connected to the first and second noble metal terminating layers, and first and second conducting layers respectively connected to said first and second barrier layers. The barrier layers are preferably composed of nickel or tungsten, whereas the noble metal terminating layers are preferably composed of silver. The resistive material, being formed between the terminating layers, is electrically connected to said copper conducting layers to form a precise thick film resistor structure whose resistance is measurable between said conducting layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.