Ballistic heterojunction bipolar transistor

US4728616A · kind A · utility

Assignee

• Cornell Research Foundation, Inc. · US

Inventors

• David Ankri · Jouy-le-Moutier, FR
• Lester F. Eastman · Ithaca, US
• Walter H. Ku · Ithaca, US

Key dates

• Filing date: Feb 20, 1987
• Grant date: Mar 1, 1988
• Expiry date: Feb 20, 2007

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S438/912

Abstract

A heterojunction transistor doped to form a specially-shaped emitter-base conduction band step or spike is disclosed. The potential barrier is then utilized to accelerate electrons across the base region at the maximum velocity obtainable without scattering electrons to the upper valleys. In this manner the electrons may be transported across the base region virtually without collisions and at a velocity approximately 10 times that of normal electron diffusion across the base region, thus increasing the frequence response of the transistor.