Process for the production of a MIS-type integrated circuit
US4728620A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Mar 18, 1986 |
| Grant date | Mar 1, 1988 |
| Priority date | — |
| Expiry date | Mar 18, 2006 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/017
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process for the production of a MIS-type integrated circuit is disclosed. In order to form an integrated circuit having reciprocally electrically insulated active components in which the gates of the components do not extend above the electrical insulations used for the reciprocal insulation of the components, the process consists of covering a semiconductor substrate (30) with a first layer (32) of insulating material, depositing on the first layer (32) of insulating material a second layer including a semiconductor or conductor material in which will be formed the gates (34a) of the active components, formulation of the field oxide (46a) of the circuit used for electrically insulating the active components from one another, production of the gates (34a) of the active components, production of the sources and drains of the components by a doping of the substrate, the doping having a reverse conductivity to that of the substrate (3), formation of insulating edges (58a) on the edges of the gates (34a) of the components, production of electrical contact holes of the circuit, and production of connections of the circuit.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.