Patent · US Expired

MOSFET switch with inductive load

US4728826A · kind A · utility

123Cited by

6References

5Claims

0Family size

Assignee

Siemens Aktiengesellschaft · DE

Inventors

Josef Einzinger · Spalt, DE
Christine Fellinger · Unterhaching, DE
Ludwig Leipold · Munich, DE
Jenoe Tihanyi · Tauberbischofsheim, DE
Roland Weber · Munich, DE

Key dates

Filing date	Jul 16, 1986
Grant date	Mar 1, 1988
Priority date	—
Expiry date	Jul 16, 2006

Classification

Technology area (CPC H)Electricity
CPC primaryH03K17/687
WIPO fieldBasic communication processes
WIPO sectorElectrical engineering

Abstract

The voltage peaks occuring upon disconnection of inductive loads are normally attenuated by a by-pass diode connected in parallel with the load. The driving countervoltage is thereby limited to the value of the forward voltage drop of the diode. For a power MOSFET with a source-side inductive load, the driving countervoltage is increased by placing a series connection of an additional MOSFET and a Zener diode between the gate of the power MOSFET and the connection of the load which is remote from the power MOSFET. The driving countervoltage at the source now becomes the Zener voltage plus the occuring gate-source voltage of the power MOSFET.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.