Layered amorphous silicon electrophotographic photosensitive member comprises BN surface layer and BN barrier layer
US4729937A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Dec 18, 1986 |
| Grant date | Mar 8, 1988 |
| Priority date | — |
| Expiry date | Dec 18, 2006 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03G5/14704
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An electrophotographic photosensitive member wherein a photoconductive layer prepared from amorphous silicon is interposed between a barrier layer and surface layer, both prepared from boron nitride, and which is characterized in that it has a high specific resistivity, and, when applied as a barrier layer, indicates a high charge retention capability, strains in said barrier layer are reduced, the surface layer absorbs very little light and allows for the permeation of the greater part of the incoming light rays, thus preventing the photosensitivity of a photoconductive layer and the residual potential from being deteriorated, and since the concentration of boron varies in the boundary of the respective layer across their thickness, the photoconductive property can be sustained and the exfoliation of the layers can be avoided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.