Patent · US Expired

Electron-beam probing of photodiodes

US4730158A · kind A · utility

86Cited by
2References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJun 6, 1986
Grant dateMar 8, 1988
Priority date
Expiry dateJun 6, 2006

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY02E10/50
  • WIPO fieldMeasurement
  • WIPO sectorInstruments

Abstract

Method and apparatus for testing photodiode arrays using an electron beam. The diodes are charged at successive intervals over the RC time constant curve to develop successively increasing voltages at the ends of succeeding time intervals. Diode voltage and current are measured at the end of each interval and the resulting data are used to develop a current-voltage characteristic for each diode.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.