Temperature and humidity compensation for gas detection apparatus
US4730479A · kind A · utility
24Cited by
9References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 23, 1986 |
| Grant date | Mar 15, 1988 |
| Priority date | — |
| Expiry date | Jun 23, 2006 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N27/4143
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
The use of multiple field effect transistors, wherein only one transistor is sensitive to the presence of a particular element, is disclosed whereby similar responses to temperature and/or humidity fluctuations may be subtracted yielding a response to a particular element that is relatively insensitive to temperature and/or humidity variations.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.