Gas-phase growth process and an apparatus for the same
US4731255A · kind A · utility
15Cited by
7References
22Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 26, 1985 |
| Grant date | Mar 15, 1988 |
| Priority date | — |
| Expiry date | Sep 26, 2005 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB05D3/061
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A gas-phase growth process for growing films of uniform thickness or having a prescribed pattern form or growing films sequentially onto a substrate and an apparatus related thereto. The films are grown by allowing an inert gas to flow over a reaction gas flow in parallel to the surface of the substrate. Optionally, the substrate surface could be irradiated by a UV light source which is directed from above the inert gas toward the substrate surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.