Patent · US Expired

Integrated circuit comprising MOS transistors having electrodes of metallic silicide and a method of fabrication of said circuit

US4731318A · kind A · utility

4Cited by

3References

3Claims

0Family size

Assignee

Societe pour l'Etude et la Fabrication de Circuits Integres Speciaux E.F.C.I.S. · FR

Inventors

Alain Roche · Lannion, FR
Joseph Borel · Échirolles, FR

Key dates

Filing date	Feb 24, 1986
Grant date	Mar 15, 1988
Priority date	—
Expiry date	Feb 24, 2006

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY10S148/152
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A novel MOS transistor structure comprises electrodes of metallic silicide and especially tantalum silicide. In the case of the gate electrode, the silicide is directly in contact with an insulating thin-film layer. In the case of the drain and source electrodes, the silicide is directly in contact with the monocrystalline silicon. The method of fabrication is thus simplified while avoiding the use of polycrystalline silicon.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.