Clad superlattice semiconductor laser
US4731789A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | May 13, 1985 |
| Grant date | Mar 15, 1988 |
| Priority date | — |
| Expiry date | May 13, 2005 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/3432
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A clad superlattice semiconductor laser is fabricated utilizing Impurity Induced Disordering (IID) techniques that provides (1) reduction of free carrier absorption in the optical cavity and (2) the ability to selectively vary the amount of index guiding in the optical waveguide independent of the properties of the electron confining multiquantum well structure. The clad superlattice semiconductor laser provides for the novel inclusion of a superlattice in a cladding layer or region of the laser structure. An effective index waveguide can be realized by selectively disordering the cladding superlattice in regions adjacent to the formed index guide type optical cavity, as long as the superlattice is designed so that the established optical mode significantly overlaps with the disordered superlattice cladding regions, i.e., the evanescent wave propagating in the laser cavity overlaps into regions of the disordered superlattice.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.