EEPROM with metal doped insulator
US4733482A · kind A · utility
9Cited by
1References
9Claims
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Assignee
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Key dates
| Filing date | Apr 7, 1987 |
| Grant date | Mar 29, 1988 |
| Priority date | — |
| Expiry date | Apr 7, 2007 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/683
Abstract
Insulating layers responsible for the trapping of electric charge in non-volatile semiconductor memories, such as FAMOS or MNOS, are fabricated as thicker layers when doped with metals having partially filled d or f electron shells. Typically the insulating layer is silicon oxide doped with up to 10 atomic % of a first transition series metal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.