Sputtering cathode on the magnetron principle
US4734183A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 15, 1986 |
| Grant date | Mar 29, 1988 |
| Priority date | — |
| Expiry date | Aug 15, 2006 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3408
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
In a sputtering cathode on the magnetron principle with a target consisting of at least one piece and composed of the material to be sputtered, there is disposed in back of the target a magnet system having a plurality of magnet units of alternately different polarity. These form at least two endless magnetic tunnels of arching lines of force situated one within the other. The poles of the magnet units that face away from the target are joined together by a magnet yoke of soft-magnetic material. To solve the problem of being able to deposit coatings of uniform thickness with only one source of power per cathode, provision is made such that the strength of at least one magnetic field forming a magnetic tunnel can be varied relative to the strength of at least one additional magnetic field forming an additional magnetic tunnel.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.