Patent · US Expired

Sputtering cathode on the magnetron principle

US4734183A · kind A · utility

17Cited by
8References
5Claims
0Family size

Assignee

Inventors

Key dates

Filing dateAug 15, 1986
Grant dateMar 29, 1988
Priority date
Expiry dateAug 15, 2006

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01J37/3408
  • WIPO fieldElectrical machinery, apparatus, energy
  • WIPO sectorElectrical engineering

Abstract

In a sputtering cathode on the magnetron principle with a target consisting of at least one piece and composed of the material to be sputtered, there is disposed in back of the target a magnet system having a plurality of magnet units of alternately different polarity. These form at least two endless magnetic tunnels of arching lines of force situated one within the other. The poles of the magnet units that face away from the target are joined together by a magnet yoke of soft-magnetic material. To solve the problem of being able to deposit coatings of uniform thickness with only one source of power per cathode, provision is made such that the strength of at least one magnetic field forming a magnetic tunnel can be varied relative to the strength of at least one additional magnetic field forming an additional magnetic tunnel.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.