Method for producing an electronic device having a multi-layer structure
US4735822A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 24, 1986 |
| Grant date | Apr 5, 1988 |
| Priority date | — |
| Expiry date | Dec 24, 2006 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for producing an electronic device having a multi-layer structure comprising one or more valence electron controlled semiconductor thin layers formed on a substrate, comprises forming at least one of said valence electron controlled semiconductor thin layers according to the photo CVD method and forming at least one of other constituent layers according to the method comprising introducing a gaseous starting material for film formation and a gaseous halogenic oxidizing agent having the property of oxidizing said starting material into a reaction space to effect chemical contact therebetween to thereby form a plurality of precursors including a precursor in an excited state and transferring at least one of these precursors into a film forming space communicated with the reaction space as a feed source for the constituent element of the deposited film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.