Method for forming patterns by using a high-current-density electron beam
US4735881A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 8, 1986 |
| Grant date | Apr 5, 1988 |
| Priority date | — |
| Expiry date | Jul 8, 2006 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S430/143
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method incorporated in a high throughput EB lithography suitable to the fabrication of VLSI semiconductor circuit. The method comprises a step of providing patterns which are delineated to join together with an overlap determined in accordance with the time interval between the respective delineations thereof by using an electron beam having a high current density and/or high energy. When a first and a second patterns having respective edge portions contacting with each other are delineated in the order of the first pattern and the second pattern by respective exposures thereof to corresponding at least single shots of an electron beam, at least one of the first and second patterns is extended in the direction perpendicular to the edge portions so that the patterns are provided with an overlap with the amount determined in accordance with the time interval between the respective shots of the electron beam to said edge portions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.