Deep UV photoresist composition with 1,3-disubstituted-5-diazobarbituric acids
US4735885A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 6, 1985 |
| Grant date | Apr 5, 1988 |
| Priority date | — |
| Expiry date | Dec 6, 2005 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/0163
- WIPO fieldOrganic fine chemistry
- WIPO sectorChemistry
Abstract
Disclosed are substituted derivatives of 5-diazobarbituric acid selected from those having the formulas: ##STR1## wherein R.sub.1 and R.sub.2 are substituents selected from the group consisting of C.sub.3 to C.sub.12 alkyl, cyclohexyl, benzyl and C.sub.2 to C.sub.6 aralkyl groups, wherein R.sub.3 and R.sub.4 are substituents selected from the group consisting of C.sub.1 to C.sub.12 alkyl, cyclohexyl, benzyl or other C.sub.2 to C.sub.6 aralkyl groups and R.sub.5 is selected from the group consisting of .alpha.,.omega.-disubstituted C.sub.2 to C.sub.12 alkyl, methylene dicyclohexyl, or C.sub.1 to C.sub.6 dialkylphenylene. These compounds provide DUV response with an absorption maximum near 260 nm. The substituents are chosen to be nonabsorbing alkyl groups that allow efficient photobleaching of the sensitizer during exposure. The sensitizers of the present invention are designed to function in the DUV region and are useful in the manufacture of semi-conductor devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.