Method for forming a polycrystalline monolayer
US4735909A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 14, 1986 |
| Grant date | Apr 5, 1988 |
| Priority date | — |
| Expiry date | Oct 14, 2006 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
Abstract
Improved techniques are provided for forming a very thin polycrystalline layer of a semiconductor material on a glass substrate. The film material may be formed from a slurry of a semiconductor powder and a liquid carrier, and the slurry economically applied at room temperature by spraying techniques. Once dried, the film is compressed by the application of a substantial mechanical force. The compressed film is regrown in a heated atmosphere, forming a polycrystalline film comprised of large mean diameter crystals, with many crystals having a mean diameter in excess of the film thickness. A high quality cadmium sulfide polycrystalline film suitable for forming a photovoltaic cells may be inexpensively manufactured according to these techniques.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.