Patent · US Expired

Method for structuring silicon carbide

US4735920A · kind A · utility

24Cited by

3References

6Claims

0Family size

Assignee

Siemens Aktiengesellschaft · DE

Inventors

Dietrich Stephani · Bubenreuth, DE
Peter Lanig · Erlangen, DE
Guenther Ziegler · Attleboro, US

Key dates

Filing date	Feb 4, 1987
Grant date	Apr 5, 1988
Priority date	—
Expiry date	Feb 4, 2007

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY10S438/945
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method for structuring silicon carbide by photolithography and plasma etching wherein a substrate of silicon carbide is covered on a flat side with a structured silicon layer, and the plasma etching is then carried out with a gaseous mixture of a halogenated hydrocarbon and oxygen, the oxygen being present in an amount of at least 40% and preferably 70 to 95% by volume.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.