Charge pump circuit for driving N-channel MOS transistors
US4736121A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 18, 1986 |
| Grant date | Apr 5, 1988 |
| Priority date | — |
| Expiry date | Aug 18, 2006 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K19/01714
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
This charge pump circuit comprises a capacitor connected with a first terminal thereof to a reference voltage point through a first switch element and with a second terminal thereof to a switching section. The switching section, which is arranged between a positive supply voltage line and the ground, is controlled so as to alternately and selectively connect the second terminal of the capacitor to the positive supply and to ground. The first terminal of the capacitor is further connected to the gate of the MOS transistor to be driven. During operation the switch section is controlled so as to alternately charge the capacitor and allow transfer of the charge of the capacitor to the MOS transistor gate, thereby achieving a fast charging of the MOS transistor and a low circuit dissipation in the DC mode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.