Method of fabrication of a light image detector and a two-dimensional matrix detector obtained by means of said method
US4736234A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 16, 1986 |
| Grant date | Apr 5, 1988 |
| Priority date | — |
| Expiry date | Jul 16, 2006 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/191
Abstract
In a light image detector, a substrate is covered with a first layer of conductive material on which is formed a two-dimensional matrix array of photodiodes in the form of pads arranged in rows and columns and each comprising a layer of amorphous semiconductor material doped with a predetermined type (n-type or p-type), a layer of undoped amorphous semiconductor material, a layer of amorphous semiconductor material doped with another predetermined type (n-type or p-type), a second layer of conductive material, each photodiode being insulated from adjacent photodiodes by means of insulating material. On the insulating material, columns of material are disposed along the columns of photodiodes and are each formed by a layer of metallic material and a layer of doped amorphous semiconductor material. Connection elements are each connected to a photodiode through the layer of conductive material of the photodiode, are located in proximity to a column and each formed by a layer of metallic material and a layer of doped amorphous semiconductor material. Rows of material are disposed along the lines of photodiodes and overlap the columns as well as at least one connection element at each p…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.