Protection device utilizing one or more subsurface diodes and associated method of manufacture
US4736271A · kind A · utility
55Cited by
5References
26Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 23, 1987 |
| Grant date | Apr 5, 1988 |
| Priority date | — |
| Expiry date | Jun 23, 2007 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/611
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A protection device (14) for an integrated circuit (12) created on a semiconductor body (24 and 26) utilizes one or more semiconductor diodes (D.sub.L and/or D.sub.H) that have subsurface PN junctions (46 and/or 56) for preventing high-magnitude voltages, such as those generated by electrostatic discharge, from damaging sensitive electronic elements of a protected circuit component (16) formed from part of the body. The device is fabricated by an epitaxial layer/double buried region process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.