Layered amorphous silicon imaging members
US4737429A · kind A · utility
20Cited by
7References
49Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 26, 1986 |
| Grant date | Apr 12, 1988 |
| Priority date | — |
| Expiry date | Jun 26, 2006 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03G5/08221
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An electrostatographic imaging member comprised of a supporting substrate; a hydrogenated amorphous silicon photogenerator layer; and in contact therewith a plasma deposited charge transporting layer with components therein selected from the group consisting of silicon nitrides, boron nitrides, aluminum nitrides, phosphorous nitrides, gallium nitrides, boron phosphides, aluminum phosphides, boron oxides, aluminum oxides, gallium oxides, and organosilanes; and wherein the transporting layer contains therein hydrogen, halides, or mixtures thereof.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.