Process for developing implanted buried layer and/or key locators
US4737468A · kind A · utility
19Cited by
11References
10Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Apr 13, 1987 |
| Grant date | Apr 12, 1988 |
| Priority date | — |
| Expiry date | Apr 13, 2007 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/975
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention consists of a process of blanket implanting a key area and buried layer without the use of nitride or thick oxide layers. The key area is then etched leaving the surface of the key area below the surface of the buried layer. Upon growing an epitaxial layer, the key area will be identifiable by a step in the surface of the epi layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.