Photoelectric image sensor
US4737852A · kind A · utility
7Cited by
4References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 16, 1986 |
| Grant date | Apr 12, 1988 |
| Priority date | — |
| Expiry date | May 16, 2006 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/191
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
An image sensor of the kind which employs a line array of a-Si photodiodes on an insulating substrate and in which the outputs of the diodes are stored in the lead capacitances until readout. To increase the size of the lead capacitance and thereby to improve the linearity of the ouput, the lead between each diode and its processing circuit is made one plate of a capacitor, of which the other plate is a metal film insulated from the lead and advantageously maintained at ground.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.