Antireflection film
US4738497A · kind A · utility
1Cited by
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1Claims
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Assignee
Inventors
Key dates
| Filing date | Oct 2, 1985 |
| Grant date | Apr 19, 1988 |
| Priority date | — |
| Expiry date | Oct 2, 2005 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S359/90
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An antireflection film composed of a layer of arsenic triselenide having an optical thickness in the range between 2.518 and 2.783 .mu.m, a layer of potassium chloride having an optical thickness in the range between 1.151 and 1.272 .mu.m and a layer of arsenic triselenide having an optical thickness in the range between 0.577 and 0.749 .mu.m which are successively formed on a member of infrared radiation transmitting material formed of a mixture of thalium iodide and thalium bromide. The member provided with the three-layer antireflection film is used in an atmosphere of protective gas, such as dry air or dry N.sub.2 gas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.