Intermediate layer material of three-layer resist system
US4738916A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 14, 1986 |
| Grant date | Apr 19, 1988 |
| Priority date | — |
| Expiry date | Jul 14, 2006 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/95
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An intermediate layer material of a three-layer resist system for use in processing of a semiconductor substrate, comprising an organopolysiloxane. The organopolysiloxane is expressed by a general formula (R.sub.3 SiO.sub.1/2).sub.m.(R.sub.2 SiO).sub.n.(RSiO.sub.3/2).sub.p.(SiO.sub.2).sub.q {where R is independently a hydrocarbon group or an alkoxy group; and m, n, p and q represent composition ratios of respective units and satisfy m+n+p+q=1, 1.gtoreq.m>0, 1.gtoreq.n.gtoreq.0, 1.gtoreq.p.gtoreq.0, 1.gtoreq.q.gtoreq.0 (where p and q are not simultaneously 0), m/p.ltoreq.0.3 (where p.noteq.0), and/or m/q.ltoreq.1 (where q.noteq.0)}.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.