Heterojunction bipolar integrated circuit
US4739379A · kind A · utility
11Cited by
7References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 26, 1986 |
| Grant date | Apr 19, 1988 |
| Priority date | — |
| Expiry date | Jun 26, 2006 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/05
Abstract
A heterojunction bipolar integrated circuit is disclosed which uses a heterojunction bipolar transistor with a heterojunction between an emitter region and a base region. In this transistor, a pn junction between the base region and the emitter region has a greater area than a pn junction between the base region and a collector region. A plurality of such heterojunction bipolar transistors are isolated on a substrate to perform logic operations in an unsaturated region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.