Field effect device maintaining a high speed operation in a high voltage operation
US4740822A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Apr 18, 1985 |
| Grant date | Apr 26, 1988 |
| Priority date | — |
| Expiry date | Apr 18, 2005 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/824
Abstract
A field effect transistor comprises a gate electrode applied with a gate voltage, a channel forming region forming a channel in response to the gate voltage, and source and drain regions formed on both sides of the channel forming region, respectively, the channel forming region being made of a semiconductor material having an electron affinity which decreases as the distance from one surface thereof increases. The channel is formed at the surface of the channel forming region. An additional semiconductor material having an electron affinity lower than the electron affinity at the surface of the channel forming region may be interposed between the gate electrode and the channel forming region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.